Integrated HBT and VCSEL structure and method of fabrication
US5216686A · kind A · utility
37Cited by
4References
21Claims
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Key dates
| Filing date | Feb 3, 1992 |
| Grant date | Jun 1, 1993 |
| Priority date | — |
| Expiry date | Feb 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0261
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.