Sheet plasma CVD apparatus
US5217761A · kind A · utility
8Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1991 |
| Grant date | Jun 8, 1993 |
| Priority date | — |
| Expiry date | Dec 23, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sheet plasma CVD apparatus for forming a film by generating sheet plasma in parallel with a substrate comprising a gas supply nozzle in opposition to the substrate with the sheet plasma sandwiched therebetween. A source gas supply opening is formed in the center of the gas supply nozzle. A plurality of reaction gas supply openings are formed in the periphery of the source gas supply opening, the source jetted out from the source gas supply opening and the reaction jetted out from the reaction gas supply openings. The source and reaction gases intersect with each other in the sheet plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.