Opto-electronic semiconductor component

US5218223A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Werner Spaeth · Holzkirchen, DE
• Wolf Jakowetz · Vaterstetten, DE
• Herbert Schaefer · Herdorf, DE
• Michael Besand · Germering, DE
• Karl Osojnik · Munich, DE

Key dates

• Filing date: May 17, 1990
• Grant date: Jun 8, 1993
• Expiry date: May 17, 2010

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

An opto-electronic semiconductor component having a light transmission or receiving property including a light emitting or detecting active zone lying parallel to the principle surface of the semiconductor crystal is formed so that it detects or emits light directed parallel to the active zone with high efficiency. This enables the component to be hybridize with other electrical, electro-optical or optical elements in a single plane. At least one lateral surface of the semiconductor crystal is inclined at an angle to the principle surface of the component such that light directed into or from the crystal in a direction parallel to the active zone experiences deflection by refraction or reflection toward or away from the active zone.