Process for producing storage-stable surfaces of polished silicon wafers

US5219613A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Laszlo Fabry · Burghausen, DE
• Manfred Grundner · Burghausen, DE
• Peter John · Burghausen, DE
• Wolfgang Feichtner · Ach, AT
• Dieter Graefg · Burghausen, DE
• Rosemarie Winklharrer · Marktl, DE

Key dates

• Filing date: Apr 3, 1992
• Grant date: Jun 15, 1993
• Expiry date: Apr 3, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/974
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to the silicon and at least one radical in the molecule having hydrophilic properties. Depending on the compound selected, more or less strongly hydrophilic or hydrophobic properties of the silicon surface can consequently be established under mild conditions. The wafers treated in such a manner have a high storage stability and retain their surface nature even under difficult climatic circumstances. The surface nature present after the oxidative treatment can then be restored particularly easily by hydrolysis.