Method for making field effect devices with ultra-short gates
US5219772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1991 |
| Grant date | Jun 15, 1993 |
| Priority date | — |
| Expiry date | Aug 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/053
Abstract
The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition so that the length dimension of the gate is perpendicular to a major surface of the substrate. An edge of the gate-containing substrate is exposed, and the structure comprising the source, drain and channel is grown on the edge. Using this approach, field effect devices with precisely controlled gate lengths of less than 100 angstroms are achievable. Moreover the active regions of the device can be immersed within semiconductor material so that surface properties do not deteriorate device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.