Device having a charge transfer device, MOSFETs, and bipolar transistors--a l
US5220190A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1991 |
| Grant date | Jun 15, 1993 |
| Priority date | — |
| Expiry date | Jan 16, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A semiconductor device according to the present invention has a semiconductor body of a first conductivity type, three islands of a second conductivity type, formed in the surface of the semiconductor body. Two wells of the first conductivity are formed in the first and second islands. The device further has a charge transfer device which back gate is formed of the first well, an insulated-gate FET of the first conductivity type which back gate is formed of the second island, an insulated-gate FET of the second conductivity type which back gate is formed of the second well, and a bipolar transistor which collector is formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.