Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
US5221365A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1991 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Oct 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A thin film transistor and a photovoltaic cell wherein a polycrystalline semiconductive film, having a large grain size and high carrier mobility obtained by heat treatment of a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like on a substrate with a textured surface, is used as a channel layer or a photo-activation layer, the textured surface being formed by etching one surface of the substrate or forming a textured thin film on the substrate. A method of manufacturing a polycrystalline semiconductive film, wherein a surface of a substrate is etched or a textured thin film is formed on the substrate to form a textured surface, and a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like is formed on the textured surface, and the semiconductive film is polycrystallized by heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.