Semiconductor device with active quantum well gate
US5221849A · kind A · utility
16Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1992 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Jun 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.