Controlled-turn-off high-power semiconductor component
US5221851A · kind A · utility
21Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1992 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Feb 4, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a large-area controlled-turn-off high-power semiconductor component containing a multiplicity of finely structured individual components, a semiconductor device (12) is formed by a multiplicity of small-area semiconductor chips (7) which are accommodated alongside one another in a common housing (13) and connected in parallel. This achievement avoids problems of yield with structures which are becoming finer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.