Charge coupled device and method of producing the same

US5221852A · kind A · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Eiichi Nagai · Kawasaki, JP
• Tetsuo Nishikawa · Uda, JP

Key dates

• Filing date: Feb 3, 1992
• Grant date: Jun 22, 1993
• Expiry date: Feb 3, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/153

Abstract

A charge coupled device (CCD) has a charge storage region and a potential barrier region. The CCD includes a first layer made of a first conductivity type semiconductor, a second layer made of a second conductivity type semiconductor and provided on the first layer, where the first and second conductivity types are mutually opposite types selected from n-type and p-type semiconductors, a third layer made of a first conductivity type semiconductor, impurity diffusion regions provided in at least a surface part of the third layer and having an impurity density higher than that of the third layer, a first gate electrode provided on the third layer between two mutually adjacent impurity diffusion regions, and a second gate electrode provided on each impurity diffusion region of the third layer. The impurity diffusion region forms the charge storage region of the CCD and the third layer between the two mutually adjacent impurity diffusion regions forms the potential barrier region of the CCD.