Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
US5222091A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1992 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Jan 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insullating material is overlayed the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1.3 .mu.m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.