Method of manufacturing single-crystal silicon
US5223077A · kind A · utility
10Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1991 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | Apr 12, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/90
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in said melt reservoir, melting silicon in the melt reservoir by the application of the electromagnetic field and simultaneously depositing a scull layer of silicon on the inner surface of said reservoir, and pulling up a single crystal silicon rod from the silicon melt in the melt reservoir.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.