Plasma etching method with enhanced anisotropic property and apparatus thereof
US5223085A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1991 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | Feb 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.