Method of producing an acceleration sensor of a semiconductor
US5223086A · kind A · utility
10Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1992 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | Mar 9, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/123
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.