Method for making a pressure sensor of the semiconductor-on-insulator type
US5223444A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1991 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | Sep 17, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method of making a pressure sensor formed of semiconductor material on an insulating support, i.e., as a semiconductor-on-silicon, is described. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.