Insulated gate semiconductor device with reduced based-to-source electrode short
US5223732A · kind A · utility
4Cited by
9References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 1991 |
| Grant date | Jun 29, 1993 |
| Priority date | — |
| Expiry date | May 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
A vertical power MOSFET structure having a source and base region which are not shorted together is provided. The source and base region are formed in a semiconductor substrate using a selectively patterned gate stack which is formed on the substrate as a mask. The drift region is formed of a semiconductor material covering a semiconductor substrate. The semiconductor substrate is of the same conductivity type as the drift region for a MOSFET and is of an opposite conductivity type for an IGBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.