Semiconductor wafer and manufacturing method therefor
US5225235A · kind A · utility
8Cited by
13References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 5, 1991 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Aug 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.