Process for forming thin oxide film
US5225393A · kind A · utility
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24Claims
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Key dates
| Filing date | Jan 10, 1992 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Jan 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/731
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.