Plasma ashing method and apparatus therefor
US5226056A · kind A · utility
50Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1990 |
| Grant date | Jul 6, 1993 |
| Priority date | — |
| Expiry date | Jan 9, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.