Method for selectively growing gallium-containing layers
US5227006A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1991 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Nov 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAs) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon "getters". When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600.degree. C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.