Method for electrolytic etching of silicon carbide

US5227034A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Rene Stein · Simmerath, DE
• Georg Wittmann · Herzogenaurach, DE

Key dates

• Filing date: Oct 21, 1991
• Grant date: Jul 13, 1993
• Expiry date: Oct 21, 2011

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C25F3/12
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention provides an improved method for polish-etching of silicon carbide, which is arranged in series with an electrolyte and a metallic counter-electrode in a current circuit with an adjustable direct voltage, wherein an alkaline solution is used as the electrolyte, preferably in a high concentration and at great current density. In this way, uniform removal of the material and an even surface are obtained.