Method of forming a carbon film on a substrate made of an oxide material
US5227196A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 26, 1991 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Sep 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A lamination of films is comprised of at least two film layers wherein a first film with the smallest internal stress is provided for the first layer directly on the substrate, and a second film is provided with the second smallest amount of internal stress for the second layer on the first layer, and when more than two layers are provided, additional layers of films are provided with increasing magnitude of internal stress, in sequence, in the direction of lamination from the side of the substrate. In accordance with one aspect, the hydrogen concentration of a silicon nitride layer is controlled to obtain optimum properties of the silicon nitride layer as a buffer layer between a carbon layer and an oxide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.