Tungsten chemical vapor deposition method
US5227336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1991 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Dec 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tungsten film is formed in two steps in a tungsten chemical vapor deposition method of the present invention. In a first step, a first thin tungsten film is selectively grown on a surface of a silicon substrate by a silicon reduction using a WF.sub.6 gas as a tungsten source, followed by a second step in which another tungsten film is formed on the first tungsten film by a silane reduction using a WF.sub.6 gas as a tungsten source. The state of the silicon substrate surface is monitored by a pyrometer, and the timing of change from the silicon reduction to the silane reduction is determined on the basis of the intensity of the infrared ray radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.