Broadband bipolar transistor distributed amplifier
US5227734A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1992 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Oct 20, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/605
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A distributed circuit includes a plurality of pairs of cascode coupled first and second transistors with each transistor having base, emitter, and collector electrodes. The first transistor of each pair is disposed to have a first one of emitter and collector electrodes coupled to a reference potential and the second one of said transistors of each pair is disposed to have the base electrode coupled to a reference potential with the second one the collector and emitter electrodes of the first transistor of each pair being coupled to the emitter electrode of the corresponding second transistor of each pair. The network further includes an input propagation network disposed to successively couple the base electrode of each one of the first transistors of each pair of transistors to an input terminal and an output propagation network disposed to couple the collector electrodes of each one of the second transistors of each one of the pair of transistors to an output terminal of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.