Multistage amplifier
US5227738A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 1992 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Nov 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/294
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A multistage amplifier for amplifying an input signal so as to output an amplified signal. The multistage amplifier is comprised of a plurality of transistors that are monolithically formed around a central VIA hole. Predetermined electrodes of the respective transistors are electrically connected to each other in the area immediately surrounding the central VIA hole and are connected to the VIA hole itself. This allows for a reduction of the number of VIA holes used over conventional methods. The distance between the central VIA hole and the predetermined electrodes of each of the transistors is minimal, as is the wiring pattern of each of the electrodes. No scattering is caused by the characteristics of the transistors, as they are monolithically formed in the same manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.