Semiconductor memory device having word line driver
US5227996A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 1991 |
| Grant date | Jul 13, 1993 |
| Priority date | — |
| Expiry date | Sep 10, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes first and second word lines which extend in parallel to each other, at least one line activation signal line which extends perpendicularly to the first and second word lines, a device isolation region which extends perpendicularly to the first and second word lines, a first driver for activating the first word line and having a first impurity region provided adjacent to the device isolation region and connected to the word line activation signal line, a first gate electrode and a second impurity region connected to the first word line, a second driver for activating the second word line and comprising a third impurity region provided adjacent to the device isolation region on an opposite side from the first impurity region and connected to the word line activation signal line, a second gate electrode and a fourth impurity region connected to the second word line, and a decoder connected to the first and second gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.