Method for fabricating recrystallized semiconductor film
US5228948A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 5, 1991 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Dec 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a recrystallized semiconductor film includes forming a polycrystalline or amorphous semiconductor film on a base having a melting point or softening temperature lower than the melting point of the semiconductor film, heating the base to melt it with a first heater, and melting the semiconductor film with a second heater and recrystallizing the semiconductor film while the base is molten. Thereby, generation of stress in the semiconductor film is prevented or reduced and the planarity of the semiconductor film is not damaged by distortion of the substrate and the temperature in the semiconductor film is uniform at the time of recrystallization. As a result, a recrystallized film with good crystallinity is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.