Hollow-cathode magnetron and method of making thin films
US5228963A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 1, 1991 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Jul 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A hollow-cathode magnetron for the deposition of a film upon a filament like material. A localized plasma is struck within a hollow cylindrical target to sputter material onto said filament. The localized plasma is moved around said target, such that the target is uniformly sputtered and the filament is uniformly coated. The creation and movement of the localized plasma is accomplished utilizing a plurality of bar magnets which rotate around the target, whereby the localized plasma rotates around the sputtering bore of the target. A water jacket surrounds the target and functions to cool the target. Because the plasma is localized, significant portions of the target are advantageously cooled when not being sputtered, such that higher throughput can be obtained. The invention also includes a sputtering shield which functions to inhibit the buildup of a sputtered film upon the electrically active elements, whereby the creation of electrical shorts is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.