Thin film transistor having a transparent electrode and substrate
US5229644A · kind A · utility
77Cited by
27References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1992 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Feb 5, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A TFT is formed on a transparent insulative substrate, and includes a gate electrode, a gate insulating film, a semiconductor film which has a channel portion, source and drain electrodes. An insulating film is formed on the TFT so as to cover at least the drain electrode and the gate insulating film. A transparent electrode is formed on at least part of insulating film except for a portion above the channel portion on the semiconductor film. The transparent electrode is electrically connected to the source electrode via a through hole which is formed on the insulating film at a position of the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.