VLSI integration into a 3-D WSI dual composite module
US5229917A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1992 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Jul 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The difficulty with integrating packaged devices into a dual composite module design for wafer scale devices is the height difference between the WSI and packaged devices a typical wafer scale device is 0.025 (in) high while typical packaged VLSI components are 0.080 (in) or more. This leaves little room for the other 5 layers of interconnect boards and PCI layers required for the dual composite module. The solution is that the PWB on the side of the composite heat sink has been shortened to support only the wafer scale device on the heat sink. This eliminated PWB thickness and PCI interfaces from the side with the VLSI components. Also 3-P connectors are made with a pressure contact interconnecting (PCI) board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.