Method of forming refractory metal free standing shapes
US5230847A · kind A · utility
5Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1991 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Jun 21, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.