Process for forming CVD film and semiconductor device
US5231058A · kind A · utility
25Cited by
1References
2Claims
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Assignee
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Key dates
| Filing date | Dec 14, 1990 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Dec 14, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.