Superconducting field effect transistor
US5231295A · kind A · utility
2Cited by
3References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1991 |
| Grant date | Jul 27, 1993 |
| Priority date | — |
| Expiry date | Aug 16, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/832
Abstract
A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.