Gaseous phase chemical treatment reactor
US5232508A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Sep 29, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4585
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a gaseous phase chemical treatment reactor for wafers. The aim of the invention is to produce a reactor in which only the face of the wafer to be treated is in fact treated. This aim is achieved with the aid of a reactor comprising at least one treatment chamber (19) located within a main chamber (9) and connected by one of its ends to means (17) for injecting a treatment gas onto a wafer (1) and by its other end to a means (15) for securing said wafer, in that the latter is gripped between a heating susceptor or base (13) and the retaining means (15) in such a way as to seal said treatment chamber (19) and maintain within the latter a pressure below that of the main chamber (9). The invention more particularly relates to reactors for depositing tungsten on silicon wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.