Underlayer doping in thin film magnetic recording media
US5232566A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Oct 15, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The magnetic properties of a cobalt based, thin film, magnetic recording layer are controlled, independent of controlling the process for depositing the magnetic layer itself, by the introduction of process compatible dopant gases into an argon atmosphere during the vacuum deposition (i.e. a sputtering process or an evaporation process) of a chromium based underlayer upon which the magnetic layer is subsequently deposited. The same or a different dopant may also be introduced into the magnetic layer. The process compatible dopant gases described contain oxygen, nitrogen and/or carbon, and mixtures thereof, and include the group purified air, oxygen, nitrogen, a mixture of oxygen and nitrogen, carbon monoxide, carbon dioxide, methane and water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.