Metal deposition
US5232869A · kind A · utility
16Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Jul 28, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the deposition of metal on solid substrates by a Metal Organic Chemical Deposition process, an improvement comprises the provision of vapors of a precursor of the metal by passing an inert carrier gas through a mixture of the metal precursor and a liquid having a vapor pressure at ambient temperature lower than that of the metal precursor and in which the metal precursor is at least partially soluble.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.