MOS semiconductor device formed on insulator
US5233207A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 24, 1991 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Jun 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
An MOS type semiconductor device having an SOI structure comprises an insulating film formed on a semiconductor substrate, a conductive layer formed on the insulating film serving as a gate electrode, a dielectric film covering upper and side surfaces of the conductive and the insulating film and a single semiconductor layer formed on the dielectric film, the semiconductor layer including a first part formed over an upper surface of the conductive layer, a second part formed on a side surface of the conductive layer and a third part formed over a part of the dielectric film covering directly the insulating film so that the first and third parts serve as a source and a drain or vice versa and the second part serves as a channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.