Guard ring structure with graded Be implantation
US5233209A · kind A · utility
16Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Jan 24, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5.times.10.sup.14 per cm.sup.2 and subsequently annealed to provide a guard ring profile with a p+core and a superlinearly graded tail. The doping profile of the guard ring immediately adjacent the core is superlogarithmic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.