Lateral field FBAR
US5233259A · kind A · utility
102Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1991 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Feb 19, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8542
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention is a design for lateral field film bulk acoustic resonators (LF-FBAR). All electrodes in this design are located on one surface of the piezoelectric material, thereby simplifying manufacturing and improving performance. The gap between electrodes is limited to a specified dimension to maximize the efficiency of the device. Single and multi-pole devices are described. Barium magnesium fluoride and lithium niobate are specified as the piezoelectric material for high frequency applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.