High power field effect transistor amplifier
US5233313A · kind A · utility
12Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Jul 1, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high power field effect transistor (FET) amplifier which can provide a high gain over a wide bandwidth of a microwave range includes, on a first substrate on which a grounded-source field effect transistor is disposed, a series combination of an inductor and a capacitor connected between the gate of the FET and ground. The gate of the FET is coupled to an input impedance matching circuit disposed on a second substrate. The drain of the FET is coupled to an output impedance matching circuit disposed on a third substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.