Integrated semiconductor laser with electronic directivity and focusing control
US5233623A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1992 |
| Grant date | Aug 3, 1993 |
| Priority date | — |
| Expiry date | Apr 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated semiconductor laser device includes electronic direction and focusing control. The integrated semiconductor laser device may be used for either transmitting output laser beams or as a laser amplifier for receiving incoming laser beams. The direction and focusing control of the device operates by applying electric current to electrodes coupled to an active channel within an extension chamber of the integrated semiconductor laser device. The applied currents inject a minority carrier density distribution into the active channel. Since the speed of light within a semiconductor changes with minority carrier density distribution, a laser beam wave front may be shaped by the injected minority carrier density distribution to direct and/or focus a laser light beam. The direction and focusing control is completely integrated within the semiconductor laser device and time constants for the electronic direction and focusing control are in nanoseconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.