Microwave plasma chemical vapor deposition apparatus comprising an inclined rotating substrate holder
US5234502A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1991 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Mar 6, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition apparatus deposits a thin film on a substrate according to a chemical vapor deposition method by using plasma energy and reaction gas. The chemical vapor deposition apparatus comprises at least a reaction tube, a waveguide and a substrate holder. The reaction tube is inserted through the waveguide to thereby form a reaction vessel. The reaction tube is connected with a reaction gas source, and reaction gas is introduced into the reaction tube. The substrate holder is placed at an area in which the reaction tube and the waveguide intersect. The substrate holder provides a rotation axis for rotating the substrate, and the waveguide is provided such that a center axis thereof is inclined in relation to a center axis of the substrate holder. In addition, the substrate holder can be freely rotated around the center axis thereof. By rotating the substrate so that a plasma is generated at the position opposite to and inclined against the substrate, all portions of the substrate are heated uniformly. Thus, a thin film having uniform thickness can be deposited over the entire surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.