Physical vapor deposition dual coating process
US5234561A · kind A · utility
97Cited by
16References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1988 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Aug 25, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/35
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A machine for covering a substrate (FIG. 14, 540) by means of both cathodic arc plasma deposition (CAPD) (FIG. 2) and magnetron sputtering (FIG. 1) without breaking vacuum in a single chamber (FIG. 14, 421). A computer system monitors (FIG. 3, 403, 405) and controls all coating process parameters to coat in any sequence multiple thin film layers using either the CAPD or magnetron sputtering process. A rotating substrate table (FIG. 14, 470) used in conjunction with internal and external targets coats both sides of the substrate simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.