Method of making a semiconductor film where the hydrogen and/or fluorine is released prior to ion beam crystallization
US5234843A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1992 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Jan 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.