Semiconductor laser device
US5235609A · kind A · utility
18Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1991 |
| Grant date | Aug 10, 1993 |
| Priority date | — |
| Expiry date | Oct 18, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprises: an active layer; a lower clad layer provided below the active layer; an upper clad layer provided above the active layer; and a current blocking layer, provided above the upper clad layer, for limiting an active region of the active layer in a direction along a width to make the active region of a striped form which has a wide portion and a narrow portion. According to the device, coherence of an oscillated laser beam is reduced, thereby to decrease a feedback induced noise when used for a pickup of an optical information recording/reproducing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.