Method for plasma etch of ruthenium
US5236550A · kind A · utility
18Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1992 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | Apr 24, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a process for patterning ruthenium. A layer of ruthenium is formed on a substrate. The ruthenium is masked. The ruthenium is exposed to an oxygen plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.