Method of manufacturing a surface-emitting type semiconductor laser device
US5236864A · kind A · utility
6Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | May 12, 1992 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | May 12, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/955
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.