Semiconductor bipolar transistor with concentric regions
US5237200A · kind A · utility
10Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1992 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | Feb 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.