Switching arrangement for an RF GTO
US5237225A · kind A · utility
8Cited by
11References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1991 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | Nov 29, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/08144
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A switching arrangement for an RF-GTO is specified. It comprises a latching-type semiconductor component (GTO) of familiar construction. The circuit for turning off the semiconductor component (GTO) is designed in such a manner that the turn-off gain I.sub.A /I.sub.G, peak is distinctly less than 3 and, in particular, less than or equal to 1. During the turning-off, the drive is hard, that is to say has a high rate of increase dI.sub.G /dt and high current. A capacitance (C.sub.p) is connected directly in parallel with the semiconductor component (GTO).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.