Temperature sensing device for use in a power transistor
US5237481A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 1991 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | May 29, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S323/907
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor diode array monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode array provides a voltage that varies linearly as a function of temperature for the power transistor. The diode array is constructed in such a manner so as to prevent latch-up (i.e. where a parasitic silicon controlled rectifier is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage). The diode array includes at least three diodes that are either in parallel or are in series. The two types of diode array can be used in either a high-side driver circuit or a low-side driver circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.